Ãåíåðàöèÿ ïîñòîÿííîãî òîêà ïðè âîëíîâîì ñìåøåíèè â ïîëóïðîâîäíèêîâûõ ìèêðîñòðóêòóðàõ

Генерация постоянного тока при волновом смешении в полупроводниковых микроструктурах

We describe a novel effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

Более детальное изложение можно найти в электронном препринте cond-mat/9903092 http://xxx.lanl.gov/abs/cond-mat/9903092
либо
http://xxx.itp.ru/abs/cond-mat/9903092

Докладчик:
К. Н. Алексеев